Micron Sets Late 2027 Target for G11 NAND Chip Rollout
The new memory uses wafer bonding to double storage density and boost speeds for AI workloads.
By Adewale Fletcher ·
Micron will begin mass production of its G11 3D NAND flash memory in the second half of 2027. The company presented the roadmap at an event this week, stating that the new generation will offer approximately twice the storage density of its current products. It will also feature faster input and output speeds and reduced power consumption.
In triple-level-cell configuration, G11 is projected to reach 42 Gb/mm2, up from 21 Gb/mm2 in the existing G9 generation. I/O speeds are expected to increase by up to 50%, rising from 3,600 MT/s to 5,400 MT/s. The energy required to transfer each bit should drop by more than 25%. These metrics exceed the next-generation NAND offerings from rivals Kioxia and Samsung.
The core technical shift in G11 is the adoption of wafer-on-wafer bonding. This method allows Micron to manufacture the memory array and the peripheral circuitry on separate wafers, each optimized for its specific function, before bonding them together. While Micron has used CMOS-under-array designs for several generations, bonding provides greater flexibility in optimizing both the memory and logic components independently.
Scott DeBoer, Micron's president and chief technology and products officer, confirmed the design relies on wafer bonding. He described G11 as the world's most advanced NAND. DeBoer noted that the company had previously committed to introducing the technology when it became cost-effective and aligned with product specifications, adding that the timing is now correct.
The new chips will surpass 400 layers, though Micron has not disclosed the exact count of active wordlines or memory decks. The company stated the design will feature an industry-leading memory cell pitch, indicating that density gains will come from both increased layers and smaller cell dimensions. G11 is intended for high-capacity SSDs in client and data center environments, as well as storage devices built for artificial intelligence workloads.
Micron plans to share further technical details in 2027 as high-volume production approaches. Beyond G11, the company is developing high-mobility materials and ultra-dense cell architectures to continue scaling in all three dimensions. DeBoer said the focus will remain on new materials and densifying the cell architecture, while noting that the industry generally continues to add layers and shrink dimensions to increase capacity.
